In article the developed circuitry decision with high response characteristics of the multistage programmable attenuator very high frequency of power on the basis of low-sized microstrip elements and heterojunction GaAs HEMT of structures is considered. The main aspects of design and functioning of the diagram are described. Results of simulation mathematical modeling are given in a software package of Microwave Office.
Keywords: MMIC, low-sized microstrip structures, programmable attenuator, heterojunction, HEMT, GaAs, Microwave Office.